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| 2SA1031, 2SA1032 Silicon PNP Epitaxial Application * Low frequency low noise amplifier * Complementary pair with 2SC458 (LG) and 2SC2310 Outline 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1031 -30 -30 -5 -100 100 300 150 -55 to +150 2SA1032 -55 -50 -5 -100 100 300 150 -55 to +150 Unit V V V mA mA mW C C Electrical Characteristics (Ta = 25C) 2SA1031 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1032 Max -- -- -- -0.5 -0.5 500 -0.8 -0.2 -- 4.0 5 Min -55 -50 -5 -- -- 100 -- -- 200 -- -- Typ -- -- -- -- -- -- -- -- 280 3.3 -- Max -- -- -- -0.5 -0.5 320 -0.8 -0.2 -- 4.0 5 V V MHz pF dB Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -18 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, I C = -2 mA VCE = -12 V, I C = -2 mA I C = -10 mA, I B = -1 mA VCE = -12 V, I C = -2 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 500 , f = 120 Hz Min -30 -30 -5 -- -- 100 -- -- 200 -- -- Typ -- -- -- -- -- -- -- -- 280 3.3 -- Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF Note: 1. The 2SA1031 and 2SA1032 are grouped by h FE as follows. B C 160 to 320 160 to 320 D 250 to 500 -- 100 to 200 100 to 200 2SA1031 2SA1032 2 2SA1031, 2SA1032 3 2SA1031, 2SA1032 4 2SA1031, 2SA1032 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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